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The last 5 uploaded publications
Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
M. T. Greenaway, Е. Е. Вдовин, Davit Ghazaryan, Abhishek Misra, Artem Mishchenko, Yun Cao, Zihao Wang, John R. Wallbank, Matthew Holwill, Yu. N. Khanin, С. В. Морозов, Kenji Watanabe, Takashi Taniguchi, O. Makarovsky, T. M. Fromhold, A. Patanè, A. K. Geǐm, Vladimir I. Fal’ko, Konstantin ‘kostya’ Novoselov, L. Eaves (2018). Tunnel spectroscopy of localised electronic states in hexagonal boron nitride. Communications Physics, 1(1), DOI: 10.1038/s42005-018-0097-1.
Article170 days agoPhotoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures
Mahabub Alam Bhuiyan, Z. R. Kudrynskyi, Debarati Mazumder, Jake D. G. Greener, O. Makarovsky, Christopher J. Mellor, Evgeny E. Vdovin, B. A. Piot, I. I. Lobanova, Z. D. Kovalyuk, Marina Nazarova, Artem Mishchenko, Konstantin ‘kostya’ Novoselov, Yang Cao, L. Eaves, G. Yusa, A. Patanè (2018). Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures. Advanced Functional Materials, 29(3), DOI: 10.1002/adfm.201805491.
Article170 days agoObservation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures
Yu. N. Khanin, Е. Е. Вдовин, I. A. Larkin, O. Makarovsky, Yu. A. Sklyueva, Artem Mishchenko, Yi Bo Wang, Aleksey Kozikov, Р. В. Горбачев, Konstantin ‘kostya’ Novoselov (2018). Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures. JETP Letters, 107(4), pp. 238-242, DOI: 10.1134/s0021364018040069.
Article170 days agoVertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
Thanasis Georgiou, R. Jalil, Branson D. Belle, L. Britnell, Р. В. Горбачев, С. В. Морозов, Yong-Jin Kim, A. Gholinia, Sarah J. Haigh, O. Makarovsky, L. Eaves, Л. А. Пономаренко, A. K. Geǐm, Konstantin ‘kostya’ Novoselov, Artem Mishchenko (2012). Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics. Nature Nanotechnology, 8(2), pp. 100-103, DOI: 10.1038/nnano.2012.224.
Article180 days agoHigh Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures
Garry W. Mudd, Simon A. Svatek, Lee Hague, O. Makarovsky, Z. R. Kudrynskyi, Christopher J. Mellor, Peter H. Beton, L. Eaves, Konstantin ‘kostya’ Novoselov, Z. D. Kovalyuk, Evgeny E. Vdovin, Alexander J. Marsden, Neil R. Wilson, A. Patanè (2015). High Broad‐Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures. Advanced Materials, 27(25), pp. 3760-3766, DOI: 10.1002/adma.201500889.
Article180 days ago