Loading publications…
The last 5 uploaded publications
Electron–phonon coupling in semiconductors within the GW approximation
Ferenc Karsai, Manuel Engel, Espen Flage−Larsen, Kresse Georg (2018). Electron–phonon coupling in semiconductors within the GW approximation. New Journal of Physics, 20(12), pp. 123008-123008, DOI: 10.1088/1367-2630/aaf53f.
Article179 days agoHow to verify the precision of density-functional-theory implementations via reproducible and universal workflows
Emanuele Bosoni, Louis Beal, Marnik Bercx, Peter Blaha, Stefan Blügel, J. D. Broder, Martin Callsen, Stefaan Cottenier, Augustin Degomme, Vladimir Dikan, Kristjan Eimre, Espen Flage−Larsen, Marco Fornari, Alberto Garcı́a, Luigi Genovese, Matteo Giantomassi, Sebastiaan P. Huber, Henning Janssen, Georg Kastlunger, Matthias Krack, Kresse Georg, Thomas D. Kühne, Kurt Lejaeghere, Georg K. H. Madsen, Martijn Marsman, Nicola Marzari, Gregor Michalicek, Hossein Mirhosseini, Tiziano Müller, Guido Petretto, Chris J. Pickard, Samuel Poncé, Gian‐Marco Rignanese, Oleg Rubel, Thomas Ruh, Michael Sluydts, Danny E. P. Vanpoucke, Sudarshan Vijay, Michael Wolloch, Daniel Wortmann, Aliaksandr V. Yakutovich, Ju‐Song Yu, Austin Zadoks, Bonan Zhu, Giovanni Pizzi (2023). How to verify the precision of density-functional-theory implementations via reproducible and universal workflows. Nature Reviews Physics, 6(1), pp. 45-58, DOI: 10.1038/s42254-023-00655-3.
Article179 days agoEffects of electron-phonon coupling on absorption spectrum: <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>K</mml:mi></mml:math> edge of hexagonal boron nitride
Ferenc Karsai, Moritz Humer, Espen Flage−Larsen, Peter Blaha, Kresse Georg (2018). Effects of electron-phonon coupling on absorption spectrum: <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>K</mml:mi></mml:math> edge of hexagonal boron nitride. Physical review. B./Physical review. B, 98(23), DOI: 10.1103/physrevb.98.235205.
Article177 days agoOptical and electronic properties of Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>N<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>α</mml:mi></mml:math>-SiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><…
Kresse Georg, Martijn Marsman, L. E. Hintzsche, Espen Flage−Larsen (2012). Optical and electronic properties of Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>N<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>α</mml:mi></mml:math>-SiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><…. Physical Review B, 85(4), DOI: 10.1103/physrevb.85.045205.
Article169 days ago<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi></mml:math>-Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>N<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>(0001)/Si(111) interface: Phosphorus defects, valence band offsets, and their role of passivating the interface states
Espen Flage−Larsen, Ole Martin Løvvik, Changming Fang, Kresse Georg (2013). <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi></mml:math>-Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>N<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>(0001)/Si(111) interface: Phosphorus defects, valence band offsets, and their role of passivating the interface states. Physical Review B, 88(16), DOI: 10.1103/physrevb.88.165310.
Article169 days ago