Loading publications…
The last 5 uploaded publications
High-Mobility Compensated Semimetals, Orbital Magnetization, and Umklapp Scattering in Bilayer Graphene Moiré Superlattices
Artur L. Shilov, M. A. Kashchenko, Pierre A. Pantaleón, Yibo Wang, Mikhail Kravtsov, Andrei Kudriashov, Zhen Zhan, Takashi Taniguchi, Kenji Watanabe, Sergey Slizovskiy, Konstantin ‘kostya’ Novoselov, Vladimir I. Fal’ko, F. Guinea, D. A. Bandurin (2024). High-Mobility Compensated Semimetals, Orbital Magnetization, and Umklapp Scattering in Bilayer Graphene Moiré Superlattices. ACS Nano, 18(18), pp. 11769-11777, DOI: 10.1021/acsnano.3c13212.
Article170 days agoViscous terahertz photoconductivity of hydrodynamic electrons in graphene
M. Kravtsov, А. Л. Шилов, Yi Yang, T. Pryadilin, M. A. Kashchenko, Olena Popova, M. Titova, D. Voropaev, Y. Wang, K. Shein, Igor Gayduchenko, Gregory Goltsman, M. Lukianov, Andrei Kudriashov, Takashi Taniguchi, Kenji Watanabe, Dmitry Svintsov, Shaffique Adam, Konstantin ‘kostya’ Novoselov, Alessandro Principi, D. A. Bandurin (2024). Viscous terahertz photoconductivity of hydrodynamic electrons in graphene. Nature Nanotechnology, DOI: 10.1038/s41565-024-01795-y.
Article170 days agoTerahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions
Dmitry Mylnikov, Elena Titova, M. A. Kashchenko, Ilya V. Safonov, Sergey S. Zhukov, Valentin A. Semkin, Konstantin ‘kostya’ Novoselov, D. A. Bandurin, Dmitry Svintsov (2022). Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions. Nano Letters, 23(1), pp. 220-226, DOI: 10.1021/acs.nanolett.2c04119.
Article170 days agoHigh electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
D. A. Bandurin, Anastasia V. Tyurnina, Geliang Yu, Artem Mishchenko, Viktor Zólyomi, С. В. Морозов, Roshan Krishna Kumar, Р. В. Горбачев, Z. R. Kudrynskyi, Sergio Pezzini, Z. D. Kovalyuk, U. Zeitler, Konstantin ‘kostya’ Novoselov, A. Patanè, L. Eaves, I. V. Grigorieva, Vladimir I. Fal’ko, A. K. Geǐm, Yang Cao (2016). High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nature Nanotechnology, 12(3), pp. 223-227, DOI: 10.1038/nnano.2016.242.
Article179 days agoNegative local resistance caused by viscous electron backflow in graphene
D. A. Bandurin, Iacopo Torre, Roshan Krishna Kumar, M. Ben Shalom, Andrea Tomadin, Alessandro Principi, Gregory Auton, Ekaterina Khestanova, Konstantin ‘kostya’ Novoselov, I. V. Grigorieva, Л. А. Пономаренко, A. K. Geǐm, Marco Polini (2016). Negative local resistance caused by viscous electron backflow in graphene. Science, 351(6277), pp. 1055-1058, DOI: 10.1126/science.aad0201.
Article179 days ago