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Get Free AccessUltrasmall-scale semiconductor devices (≤5 nm) are advancing technologies, such as artificial intelligence and the Internet of Things. However, the further scaling of these devices poses critical challenges, such as interface properties and oxide quality, particularly at the high-
Viswanath G. Akkili, Jongchan Yoon, Kihyun Shin, Jeong Sanghyun, Ji‐Yun Moon, Jun‐Hui Choi, Seung-Il Kim, Ashish A. Patil, Frederick Aziadzo, J.H. Kim, Su-Hyeon Kim, Dong‐Wook Shin, Jung‐Sub Wi, Hoon‐Hwe Cho, Joon Sik Park, Eui‐Tae Kim, Dong‐Eun Kim, Jaeyeong Heo, Graeme Henkelman, Konstantin ‘kostya’ Novoselov, Choong‐Heui Chung, Jae‐Hyun Lee, Zonghoon Lee, Sangyeob Lee (2024). Amorphous Carbon Monolayer: A van der Waals Interface for High-Performance Metal Oxide Semiconductor Devices. ACS Nano, DOI: 10.1021/acsnano.4c12780.
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Type
Article
Year
2024
Authors
24
Datasets
0
Total Files
0
Language
English
Journal
ACS Nano
DOI
10.1021/acsnano.4c12780
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