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  5. 3-center-3-electron σ-Adduct Enables Silyl Radical Transfer Below the Minimum Barrier for Silyl Radical Formation

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Preprint
English
2024

3-center-3-electron σ-Adduct Enables Silyl Radical Transfer Below the Minimum Barrier for Silyl Radical Formation

0 Datasets

0 Files

English
2024
DOI: 10.26434/chemrxiv-2024-dpqvv-v2

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Frank Neese
Frank Neese

Max Planck

Verified
Zihang Qiu
Paolo Cleto Bruzzese
Zikuan Wang
+7 more

Abstract

Transition-metal-catalyzed cleavage of the Si–H bond in silanes to yield silyl radicals requires substantial amounts of energy, which is commonly supplied by photons. For Rh(II) porphyrins, efficient hydrosilylation catalysis only becomes accessible upon site isolation in a MOF, and the formation of free silyl radicals likewise requires irradiation. Within the MOF, however, an uncommonly facile direct silyl radical transfer to olefin substrates is also possible, which makes thermal olefin hydrosilylation accessible at room temperature. The ability of MOF-supported Rh(II) metalloradicals to furnish an unprecedented 3-center-3-electron (3c-3e) Rh(II)-silane σ-adduct enables the assembly of a tri-component transition state that is comprised of Rh(II), silane and ethylene. The tri-component transition state bypasses the high-energy silyl radical species and enables silyl radical transfer with an activation free energy ~15 kcal∙mol–1 below the minimum energy barrier for silyl radical formation. We report direct observation of the 3c-3e silane σ-adduct, which is a stable species in the absence of light and olefins. Furthermore, a combination of experiments and quantum mechanical calculations show that direct silyl radical transfer to ethylene is promoted by the temporary oxidation of the transition structure by a proximal Rh(II) center. Thus, the crucial role of the MOF matrix is to fix the inter-Rh separation in our catalyst at a value large enough for 3c-3e silane adduct formation, but short enough for facile electron transfer.

How to cite this publication

Zihang Qiu, Paolo Cleto Bruzzese, Zikuan Wang, Hao Deng, Markus Leutzsch, Christophe Farès, Sonia Chabbra, Frank Neese, Alexander Schnegg, Constanze N. Neumann (2024). 3-center-3-electron σ-Adduct Enables Silyl Radical Transfer Below the Minimum Barrier for Silyl Radical Formation. , DOI: 10.26434/chemrxiv-2024-dpqvv-v2.

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Publication Details

Type

Preprint

Year

2024

Authors

10

Datasets

0

Total Files

0

Language

English

DOI

10.26434/chemrxiv-2024-dpqvv-v2

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