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Get Free AccessThe visualization of the space–charge region in nanowire pn junctions (see image) is presented by far-field optical microscopy. This general approach is a powerful tool for estimates of the carrier distributions and device capacitances. For the case of an n-CdS/p+-Si heterojunction we show that the carrier depletion widths in nanowires deviate from the traditional square-root dependence purely due to electrostatic effects.
Oliver Hayden, Gengfeng Zheng, P. Agarwal, Charles M. Lieber (2007). Visualization of Carrier Depletion in Semiconducting Nanowires. Small, 3(12), pp. 2048-2052, DOI: 10.1002/smll.200700600.
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Type
Article
Year
2007
Authors
4
Datasets
0
Total Files
0
Language
English
Journal
Small
DOI
10.1002/smll.200700600
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