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Get Free AccessBased on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15–0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.
Mengxiao Chen, Caofeng Pan, Taiping Zhang, Xiaoyi Li, Renrong Liang, Zhong Lin Wang (2016). Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects. , 10(6), DOI: https://doi.org/10.1021/acsnano.6b01666.
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Type
Article
Year
2016
Authors
6
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1021/acsnano.6b01666
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