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Get Free AccessThe relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free Sb
Soheil Ghods, Hyunjin Lee, Jun‐Hui Choi, Ji‐Yun Moon, Sein Kim, Seung‐Il Kim, Hyung Jun Kwun, Mukkath Joseph Josline, Chan Young Kim, Sang Hwa Hyun, Sang Won Kim, Seok‐Kyun Son, Taehun Lee, Youn‐Kyoung Lee, Keun Heo, Konstantin ‘kostya’ Novoselov, Jae‐Hyun Lee (2024). Topological van der Waals Contact for Two-Dimensional Semiconductors. ACS Nano, DOI: 10.1021/acsnano.4c07585.
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Type
Article
Year
2024
Authors
17
Datasets
0
Total Files
0
Language
English
Journal
ACS Nano
DOI
10.1021/acsnano.4c07585
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