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Jawaharlal Nehru Centre for Advanced Scientific Research
Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.
Leela S. Panchakarla, K. S. Subrahmanyam, Subhankar Saha, A. Govindaraj, H. R. Krishnamurthy, Umesh V. Waghmare, Cnr Rao (2009). Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene. Advanced Materials, 21(46), pp. 4726-4730, DOI: 10.1002/adma.200901285.
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Type
Article
Year
2009
Authors
7
Datasets
0
Total Files
0
Language
English
Journal
Advanced Materials
DOI
10.1002/adma.200901285
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