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Get Free AccessGallium arsenide (GaAs) nanowires have been synthesized in bulk quantities and high purity by laser-assisted catalytic growth. Field-emission scanning electron microscopy and transmission electron microscopy investigations show that the GaAs nanowires are produced in >90% yield, are single crystals with 〈111〉 growth axes, and have diameters varying from three to tens of nanometers, and lengths extending to tens of micrometers. Photoluminescence (PL) measurements made on individual GaAs nanowires show large blueshifts in the PL peak position compared to bulk GaAs, and are consistent with strong quantum confinement. The implications of these results are discussed.
Xiangfeng Duan, Jianfang Wang, Charles M. Lieber (2000). Synthesis and optical properties of gallium arsenide nanowires. Applied Physics Letters, 76(9), pp. 1116-1118, DOI: 10.1063/1.125956.
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Type
Article
Year
2000
Authors
3
Datasets
0
Total Files
0
Language
English
Journal
Applied Physics Letters
DOI
10.1063/1.125956
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