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Get Free AccessSingle crystal n-type silicon nanowires (SiNWs) with controlled phosphorus dopant concentrations have been successfully synthesized for the first time (see Figure). Field-effect transistor (FET) devices fabricated from these n-SiNWs exhibit good device properties, with mobilities more than 100 times greater than previous reports, and comparable to high-performance planar silicon FETs.
Gengfeng Zheng, Wei Lü, Song Jin, Charles M. Lieber (2004). Synthesis and Fabrication of High‐Performance n‐Type Silicon Nanowire Transistors. Advanced Materials, 16(21), pp. 1890-1893, DOI: 10.1002/adma.200400472.
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Type
Article
Year
2004
Authors
4
Datasets
0
Total Files
0
Language
English
Journal
Advanced Materials
DOI
10.1002/adma.200400472
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