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  5. Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

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Article
English
2002

Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

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English
2002
Journal of Materials Chemistry
Vol 12 (5)
DOI: 10.1039/b200161f

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Cnr Rao
Cnr Rao

Jawaharlal Nehru Centre for Advanced Scientific Research

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Gautam Gundiah
G. V. Madhav
A. Govindaraj
+2 more

Abstract

Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain β-SiC nanowires involves heating silica gel with activated carbon at 1360 °C in H2 or NH3. The same reaction, if carried out in the presence of catalytic iron particles, at 1200 °C gives α-Si3N4 nanowires and Si2N2O nanowires at 1100 °C. Another method to obtain Si3N4 nanowires is to heat multi-walled carbon nanotubes with silica gel at 1360 °C in an atmosphere of NH3. In the presence of catalytic Fe particles, this method yields α-Si3N4 nanowires in pure form.

How to cite this publication

Gautam Gundiah, G. V. Madhav, A. Govindaraj, Md. Motin Seikh, Cnr Rao (2002). Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires. Journal of Materials Chemistry, 12(5), pp. 1606-1611, DOI: 10.1039/b200161f.

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Article

Year

2002

Authors

5

Datasets

0

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0

Language

English

Journal

Journal of Materials Chemistry

DOI

10.1039/b200161f

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