Synthesis and Characterization of Few‐layer Nanosheets of GaN and Other Metal Nitrides

By making use of the fact that single‐ and few‐layer nanosheets of GaS and GaSe are readily obtained by micromechanical cleavage because of their mica‐like morphology, we were able to prepare GaN nanosheets by the reaction of these chalcogenide nanosheets with ammonia at 600–650 °C. The nitride nanosheets were characterized by transmission electron microscopy, atomic force microscopy, and other methods. Few‐layer VN was obtained by high‐temperature ammonolysis of exfoliated V 2 O 5 sheets. Ammonolysis of MoO 3 and MoS 2 nanosheets yields the nitride nanosheets.