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Get Free AccessThe deposition of n-octylphosphonic acid on aluminum oxide was studied. The substrate was pretreated in order to achieve a root-mean-square roughness of <1 nm, a hydroxyl fraction of 30%, and a thickness of approximately 170 nm. It was proven using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) that, rather than a monolayer, an organic multilayer was formed. The growth mechanism was identified as a Stranski−Krastanov one. It was also shown that the use of AFM, probing the surface topography, is essential for a reliable quantification and interpretation of data obtained with XPS.
Tom Hauffman, Orlin Blajiev, J. Snauwaert, Chris Van Haesendonck, Annick Hubin, Herman Terryn (2008). Study of the Self-Assembling of <i>n</i>-Octylphosphonic Acid Layers on Aluminum Oxide. Langmuir, 24(23), pp. 13450-13456, DOI: 10.1021/la801978a.
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Type
Article
Year
2008
Authors
6
Datasets
0
Total Files
0
Language
English
Journal
Langmuir
DOI
10.1021/la801978a
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