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Get Free AccessAchievement of p-n homojuncted GaN enables the birth of III-nitride light emitters. Owing to the wurtzite-structure of GaN, piezoelectric polarization charges present at the interface can effectively control/tune the optoelectric behaviors of local charge-carriers (i.e., the piezo-phototronic effect). Here, we demonstrate the significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect. By applying a -0.12% static compressive strain perpendicular to the p-n junction interface, the relative external quantum efficiency of the LED is enhanced by over 600%. Furthermore, efficiency droop is markedly reduced from 46.6% to 7.5% and corresponding droop onset current density shifts from 10 to 26.7 A cm-2. Enhanced electrons confinement and improved holes injection efficiency by the piezo-phototronic effect are revealed and theoretically confirmed as the physical mechanisms. This study offers an unconventional path to develop high efficiency, strong brightness and high power III-nitride light sources.
Xingfu Wang, Wenbo Peng, Ruomeng Yu, Haiyang Zou, Yejing Dai, Yunlong Zi, Changsheng Wu, Shuti Li, Zhong Lin Wang (2017). Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect. , 17(6), DOI: https://doi.org/10.1021/acs.nanolett.7b01004.
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Type
Article
Year
2017
Authors
9
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1021/acs.nanolett.7b01004
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