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  5. Self-Limited Growth of a Thin Oxide Layer on Rh(111)

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Article
English
2004

Self-Limited Growth of a Thin Oxide Layer on Rh(111)

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English
2004
Physical Review Letters
Vol 92 (12)
DOI: 10.1103/physrevlett.92.126102

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Kresse Georg
Kresse Georg

University of Vienna

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Johan Gustafson
Anders Mikkelsen
Mikael Borg
+9 more

Abstract

The oxidation of the Rh(111) surface at oxygen pressures from ${10}^{\ensuremath{-}10}\text{ }\mathrm{mbar}$ to 0.5 bar and temperatures between 300 and 900 K has been studied on the atomic scale using a multimethod approach of experimental and theoretical techniques. Oxidation starts at the steps, resulting in a trilayer O-Rh-O surface oxide which, although not thermodynamically stable, prevents further oxidation at intermediate pressures. A thick corundum like ${\mathrm{Rh}}_{2}{\mathrm{O}}_{3}$ bulk oxide is formed only at significantly higher pressures and temperatures.

How to cite this publication

Johan Gustafson, Anders Mikkelsen, Mikael Borg, Edvin Lundgren, L. Köhler, Kresse Georg, Michael Schmid, П. Варга, Junji Yuhara, X. Torrelles, C. Quirós, J. N. Andersen (2004). Self-Limited Growth of a Thin Oxide Layer on Rh(111). Physical Review Letters, 92(12), DOI: 10.1103/physrevlett.92.126102.

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Publication Details

Type

Article

Year

2004

Authors

12

Datasets

0

Total Files

0

Language

English

Journal

Physical Review Letters

DOI

10.1103/physrevlett.92.126102

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