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Get Free AccessThe transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
Ruomeng Yu, Lin Dong, Caofeng Pan, Simiao Niu, Hongfei Liu, Wei Liu, Soo-Jin Chua, Dongzhi Chi, Zhong Lin Wang (2012). Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics. , 24(26), DOI: https://doi.org/10.1002/adma.201201020.
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Type
Article
Year
2012
Authors
9
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1002/adma.201201020
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