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  5. Perylenediimide Nanowires and Their Use in Fabricating Field-Effect Transistors and Complementary Inverters

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Article
en
2007

Perylenediimide Nanowires and Their Use in Fabricating Field-Effect Transistors and Complementary Inverters

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en
2007
Vol 7 (9)
Vol. 7
DOI: 10.1021/nl071495u

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Younan Xia
Younan Xia

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Alejandro L. Briseño
Stefan C. B. Mannsfeld
Colin Reese
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Abstract

Perylenetetracarboxyldiimide (PTCDI) nanowires self-assembled from commercially available materials are demonstrated as the n-channel semiconductor in organic field-effect transistors (OFETs) and as a building block in high-performance complementary inverters. Devices based on a network of PTCDI nanowires have electron mobilities and current on/off ratios on the order of 10-2 cm2/Vs and 104, respectively. Complementary inverters based on n-channel PTCDI nanowire transistors and p-channel hexathiapentacene (HTP) nanowire OFETs achieved gains as high as 8. These results demonstrate the first example of the use of one-dimensional organic semiconductors in complementary inverters.

How to cite this publication

Alejandro L. Briseño, Stefan C. B. Mannsfeld, Colin Reese, Jessica M. Hancock, Yujie Xiong, Samson A. Jenekhe, Zhenan Bao, Younan Xia (2007). Perylenediimide Nanowires and Their Use in Fabricating Field-Effect Transistors and Complementary Inverters. , 7(9), DOI: https://doi.org/10.1021/nl071495u.

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Publication Details

Type

Article

Year

2007

Authors

8

Datasets

0

Total Files

0

Language

en

DOI

https://doi.org/10.1021/nl071495u

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