Optical signatures of interlayer electron coherence in a bilayer semiconductor

Emergent strongly correlated electronic phenomena in atomically thin transition-metal dichalcogenides are an exciting frontier in condensed matter physics, with examples ranging from bilayer superconductivity and electronic Wigner crystals to the ongoing search for exciton condensation. Here we take a step towards the latter by reporting experimental signatures of unconventional hybridization of the excitons with opposing dipoles consistent with coherence between interlayer electrons in a transition-metal dichalcogenide bilayer. We investigate naturally grown MoS₂ homobilayers integrated in a dual-gate device structure allowing independent control of the electron density and out-of-plane electric field. By electron doping the bilayer when electron tunnelling between the layers is negligible, we observe that the two interlayer excitons hybridize, displaying unusual behaviour distinct from both conventional level crossing and anti-crossing. We show that these observations can be explained by quasi-static random coupling between the excitons, which increases with electron density and decreases with temperature. We argue that this phenomenon is indicative of a spatially fluctuating order parameter in the form of interlayer electron coherence, a theoretically predicted many-body state that has yet to be unambiguously established experimentally outside of the quantum Hall regime.