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Get Free AccessSubstitution of heteroatoms in graphene is known to tailor its band gap. Another approach to alter the band gap of graphene is to create zero-dimensional graphene quantum dots (GQDs). Here we present the synthesis and photoluminescence properties of B-doped graphene quantum dots (B-GQDs) for the first time, having prepared the B-GQDs by chemical scissoring of B-doped graphene generated by arc-discharge in gas phase. We compare the photoluminescence properties of B-GQDs with nitrogen-doped GQDs and pristine GQDs. Besides, excitation wavelength independent PL emission, excellent upconversion of PL emission is observed in GQDs as well as B- and N-doped GQDs.
Sunita Dey, A. Govindaraj, Kanishka Biswas, Cnr Rao (2014). Luminescence properties of boron and nitrogen doped graphene quantum dots prepared from arc-discharge-generated doped graphene samples. Chemical Physics Letters, 595-596, pp. 203-208, DOI: 10.1016/j.cplett.2014.02.012.
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Type
Article
Year
2014
Authors
4
Datasets
0
Total Files
0
Language
English
Journal
Chemical Physics Letters
DOI
10.1016/j.cplett.2014.02.012
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