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Get Free AccessLateral orientated growth of In2O3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In2O3 NWs and NRs were grown along [21̄1̄] in parallel to the Si ±[11̄0] and lying in the substrate plane. The electrical measurements show that the In2O3 NWs are p-type semiconductor. By N+ doping, the resistivity of the In2O3 NWs has been tuned. The lateral self-aligned In2O3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.
L. J. Chen, Zhong Lin Wang, Cheng‐Lun Hsin, Jr‐Hau He, C. Y. Lee, Wen‐Wei Wu, Ping‐Hung Yeh (2007). Lateral Self-Aligned p-Type In<sub>2</sub>O<sub>3</sub> Nanowire Arrays Epitaxially Grown on Si Substrates. , 7(6), DOI: https://doi.org/10.1021/nl0707914.
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Type
Article
Year
2007
Authors
7
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1021/nl0707914
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