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Get Free AccessSelective doping and band-offset in core-shell nanowire (NW) structures using germanium (Ge)/ silicon (Si) can realize a type of high electron mobility transistor (HEMT) structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Fano effect. Using these techniques, we obtained conclusive evidence of hole gas accumulation in Ge/Si core-shell NWs. The control of hole gas concentration can be realized by changing the B doping concentration in the Si shell.
Kotaro Nishibe, Wipakorn Jevasuwan, Masanori Mitome, Yoshio Bando, Zhong Lin Wang, Naoki Fukata (2016). Growth and doping control of Ge/Si and Si/Ge core-shell nanowires. , DOI: https://doi.org/10.1109/iciprm.2016.7528645.
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Type
Article
Year
2016
Authors
6
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1109/iciprm.2016.7528645
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