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Get Free AccessBright n-ZnO nanowire/p-GaN film hybrid heterojunction light-emitting-diode (LED) devices are fabricated by directly growing n-type ZnO-nanowire arrays on p-GaN wafers. UV–blue electroluminescence emission was observed from the heterojunction diodes, and the heterojunction LED device exhibited a high sensitivity in responding to UV irradiation.
Ming‐Yen Lu, Yue Zhang, Lih‐J. Chen, Zhong Lin Wang, Xiaomei Zhang (2009). Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on p‐GaN Thin Film. , 21(27), DOI: https://doi.org/10.1002/adma.200802686.
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Type
Article
Year
2009
Authors
5
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1002/adma.200802686
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