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  5. Electronic structure and properties of layered gallium telluride

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Article
English
2016

Electronic structure and properties of layered gallium telluride

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0 Files

English
2016
Chemical Physics Letters
Vol 651
DOI: 10.1016/j.cplett.2016.03.045

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Cnr Rao
Cnr Rao

Jawaharlal Nehru Centre for Advanced Scientific Research

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U. Sandhya Shenoy
Uttam Gupta
Deepa S. Narang
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Abstract

Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X =S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment.

How to cite this publication

U. Sandhya Shenoy, Uttam Gupta, Deepa S. Narang, Dattatray J. Late, Umesh V. Waghmare, Cnr Rao (2016). Electronic structure and properties of layered gallium telluride. Chemical Physics Letters, 651, pp. 148-154, DOI: 10.1016/j.cplett.2016.03.045.

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Publication Details

Type

Article

Year

2016

Authors

6

Datasets

0

Total Files

0

Language

English

Journal

Chemical Physics Letters

DOI

10.1016/j.cplett.2016.03.045

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