Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Abstract The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO 3 ) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO 3 /Nb‐SrTiO 3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO 3 /Nb‐SrTiO 3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 10 5 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO 3 . The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates.