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Get Free AccessSilicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (+/-2 V).
Hossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, Nathan S. Lewis (2006). Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires. , 128(28), DOI: https://doi.org/10.1021/ja056785w.
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Type
Article
Year
2006
Authors
5
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1021/ja056785w
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