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Get Free AccessThe diffusion behavior and interlayer interactions in the LaN/AlN dual capping layers of TiN/LaN/ AlN/HfSiOx/Si stacks are investigated. Depth profiling and chemical state analysis performed after partial removal of the TiN gate indicate that Al-O replaces Al-N forming an Al-O dipole layer between the TiN and high-k layer after annealing. Meanwhile, La diffuses into HfSiOx and the La-based dipole is controlled by suppression of O diffusion to the bottom layer. Our results reveal that the properties of the TiN/LaN/AlN/HfSiOx/Si stack can be improved significantly by the dual capping layers.
Xinghua Zheng, Anping Huang, Zhisong Xiao, M. Wang, 刘宣勇 , Zhouying Wu, Paul Kim Ho Chu (2012). Diffusion Behavior of Dual Capping Layers in TiN/LaN/AlN/HfSiOx/Si Stacked Structure. , 99(13)
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Type
Article
Year
2012
Authors
7
Datasets
0
Total Files
0
Language
en
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