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Get Free AccessField-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2–3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively.
Dattatray J. Late, Anupama Ghosh, K. S. Subrahmanyam, Leela S. Panchakarla, S. B. Krupanidhi, Cnr Rao (2010). Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes. Solid State Communications, 150(15-16), pp. 734-738, DOI: 10.1016/j.ssc.2010.01.030.
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Type
Article
Year
2010
Authors
6
Datasets
0
Total Files
0
Language
English
Journal
Solid State Communications
DOI
10.1016/j.ssc.2010.01.030
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