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  5. Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing

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Article
English
2000

Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing

0 Datasets

0 Files

English
2000
Science
Vol 289 (5476)
DOI: 10.1126/science.289.5476.94

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Charles M. Lieber
Charles M. Lieber

Harvard University

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Thomas Rueckes
Kyoungha Kim
Ernesto Joselevich
+3 more

Abstract

A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube molecular wires making up the devices. These reversible, bistable device elements could be used to construct nonvolatile random access memory and logic function tables at an integration level approaching 10(12) elements per square centimeter and an element operation frequency in excess of 100 gigahertz. The viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.

How to cite this publication

Thomas Rueckes, Kyoungha Kim, Ernesto Joselevich, Greg Y. Tseng, Chin Li Cheung, Charles M. Lieber (2000). Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing. Science, 289(5476), pp. 94-97, DOI: 10.1126/science.289.5476.94.

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Publication Details

Type

Article

Year

2000

Authors

6

Datasets

0

Total Files

0

Language

English

Journal

Science

DOI

10.1126/science.289.5476.94

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