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  5. Atomic-resolution observations of semicrystalline intergranular thin films in silicon nitride

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Article
English
2006

Atomic-resolution observations of semicrystalline intergranular thin films in silicon nitride

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English
2006
Applied Physics Letters
Vol 88 (4)
DOI: 10.1063/1.2168021

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Robert O. Ritchie
Robert O. Ritchie

University of California, Berkeley

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Alexander Ziegler
Juan Carlos Idrobo
Michael K. Cinibulk
+3 more

Abstract

Nanoscale intergranular films in doped silicon-nitride ceramics are known to markedly affect toughness and creep resistance. They are regarded as being fully amorphous, but are shown here to have a semicrystalline structure in a Ce-doped Si3N4. Using two different but complementary high-resolution electron-microscopy methods, the intergranular atomic structure, imaged with sub-angstrom resolution, reveals that segregated cerium ions take very periodic positions, along the intergranular-phase∕matrix-grain interface and as a semicrystalline structure spanning the width of the intergranular phase. This result has broad implications for the understanding of the structure and role of the intergranular phase in enhancing the mechanical properties of ceramics.

How to cite this publication

Alexander Ziegler, Juan Carlos Idrobo, Michael K. Cinibulk, C. Kisielowski, Nigel D. Browning, Robert O. Ritchie (2006). Atomic-resolution observations of semicrystalline intergranular thin films in silicon nitride. Applied Physics Letters, 88(4), DOI: 10.1063/1.2168021.

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Publication Details

Type

Article

Year

2006

Authors

6

Datasets

0

Total Files

0

Language

English

Journal

Applied Physics Letters

DOI

10.1063/1.2168021

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