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Get Free AccessTunnelling, via X-valley related states, is investigated in GaAs/AlAs/GaAs single-barrier structures. The features in the tunnel current, which are experimentally observed, are associated with resonant tunnelling through the X-valley AlAs quantum well states derived from the conduction band minima, both perpendicular (X x and X y ) and parallel (X z ) to the (100) growth direction and the Si-donor states linked to the X valley. Tunnelling through the impurity states associated with X z and X x y valleys are observed for the first time.
Yurii N. Khanin, Е. Е. Вдовин, Konstantin ‘kostya’ Novoselov, Y. V. Dubrovskii, P. Omling, S.-B. Carlsson (1998). Γ-X Tunnelling in GaAs/AlAs/GaAs Heterostructure. Japanese Journal of Applied Physics, 37(6R), pp. 3245-3245, DOI: 10.1143/jjap.37.3245.
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Type
Article
Year
1998
Authors
6
Datasets
0
Total Files
0
Language
English
Journal
Japanese Journal of Applied Physics
DOI
10.1143/jjap.37.3245
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