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Get Free AccessWe demonstrated a flexible strain sensor based on ZnSnO(3) nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO(3) belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO(3) revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.
Jyh Ming Wu, Cheng–Ying Chen, Yan Zhang, Kuan-Hsueh Chen, Ya Yang, Youfan Hu, Jr‐Hau He, Zhong Lin Wang (2012). Ultrahigh Sensitive Piezotronic Strain Sensors Based on a ZnSnO<sub>3</sub> Nanowire/Microwire. , 6(5), DOI: https://doi.org/10.1021/nn3010558.
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Type
Article
Year
2012
Authors
8
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1021/nn3010558
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