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Get Free AccessMn doped ZnO nanowires (NWs) were fabricated by a one-step vapor-solid process at 500°C. The doped Mn exists in the wurtzite lattice as substitutional atom without forming secondary phases. X-ray absorption near-edge structure reveals that the doped Mn atoms occupy the Zn sites, and they lead to an expansion in lattice constants. The I-V characteristic of a single Zn1−xMnxO NW shows a typical Ohmic contact with gold electrodes. The as-received NWs could be suitable for studying spintronics in one-dimensional diluted magnetic semiconductors.
Xiaomei Zhang, Yue Zhang, Zhong Lin Wang, Wenjie Mai, Yudong Gu, Wangsheng Chu, Ziyu Wu (2008). Synthesis and characterization of Zn1−xMnxO nanowires. , 92(16), DOI: https://doi.org/10.1063/1.2905274.
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Type
Article
Year
2008
Authors
7
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1063/1.2905274
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