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Get Free AccessField-effect transistors (FETs) based on individual semiconducting oxide (SnO2 and ZnO) nanobelts with multiterminal electrical contacts have been fabricated and characterized. Simultaneous two-terminal and four-terminal measurements enable direct correlation of the FET characteristics with the nature of the contacts. Devices with high-resistance non-Ohmic contacts exhibit a Schottky barrier FET behavior. In contrast, low-resistance Ohmic contacts on the nanobelt lead to high-performance n-channel depletion mode FETs with well-defined linear and saturation regimes, large “on” current, and an on/off ratio as high as 107. The FET characteristics of such devices show a significant modification by a 0.2% H2 gas flow at room temperature. The excellent intrinsic characteristics of these nanobelt FETs make them ideal candidates as nanoscale biological and chemical sensors based on field-effect modulation of the channel conductance.
Yi Cheng, Peng Xiong, Lenwood Fields, Jiawei Zheng, Rusen Yang, Zhong Lin Wang (2006). Intrinsic characteristics of semiconducting oxide nanobelt field-effect transistors. , 89(9), DOI: https://doi.org/10.1063/1.2338754.
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Type
Article
Year
2006
Authors
6
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1063/1.2338754
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