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Get Free AccessRelaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
Andrew Higginbotham, T. W. Larsen, Jun Yao, Hao Yan, Charles M. Lieber, C. M. Marcus, Ferdinand Kuemmeth (2014). Hole Spin Coherence in a Ge/Si Heterostructure Nanowire. Nano Letters, 14(6), pp. 3582-3586, DOI: 10.1021/nl501242b.
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Type
Article
Year
2014
Authors
7
Datasets
0
Total Files
0
Language
English
Journal
Nano Letters
DOI
10.1021/nl501242b
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