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Get Free AccessWe report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.
L. Britnell, Р. В. Горбачев, R. Jalil, Branson D. Belle, F. Schedin, Artem Mishchenko, Thanasis Georgiou, M. I. Katsnelson, L. Eaves, С. В. Морозов, N. M. R. Peres, Jon Leist, A. K. Geǐm, Konstantin ‘kostya’ Novoselov, Л. А. Пономаренко (2012). Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures. Science, 335(6071), pp. 947-950, DOI: 10.1126/science.1218461.
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Type
Article
Year
2012
Authors
15
Datasets
0
Total Files
0
Language
English
Journal
Science
DOI
10.1126/science.1218461
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