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Get Free AccessAbstract Low power electronics endowed with artificial intelligence and biological afferent characters are beneficial to neuromorphic sensory network. Highly distributed synaptic sensory neurons are more readily driven by portable, distributed, and ubiquitous power sources. Here, we report a contact-electrification-activated artificial afferent at femtojoule energy. Upon the contact-electrification effect, the induced triboelectric signals activate the ion-gel-gated MoS 2 postsynaptic transistor, endowing the artificial afferent with the adaptive capacity to carry out spatiotemporal recognition/sensation on external stimuli (e.g., displacements, pressures and touch patterns). The decay time of the synaptic device is in the range of sensory memory stage. The energy dissipation of the artificial afferents is significantly reduced to 11.9 fJ per spike. Furthermore, the artificial afferents are demonstrated to be capable of recognizing the spatiotemporal information of touch patterns. This work is of great significance for the construction of next-generation neuromorphic sensory network, self-powered biomimetic electronics and intelligent interactive equipment.
Jinran Yu, Guoyun Gao, Jinrong Huang, Xixi Yang, Jing Han, Huai Zhang, Youhui Chen, Chunlin Zhao, Qijun Sun, Zhong Lin Wang (2021). Contact-electrification-activated artificial afferents at femtojoule energy. , 12(1), DOI: https://doi.org/10.1038/s41467-021-21890-1.
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Type
Article
Year
2021
Authors
10
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1038/s41467-021-21890-1
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